Samsung Semiconductor, Inc.

SI-N8V3616E0WW

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SpecificationsProduct Description
Height 2.20mm
Drive Voltage (Max Rds On, Min Rds On) 1.56A
Color White, Warm
Part Status Active
Lens Type -
Flux @ Current/Temperature - Test 3000K
Contact Finish Square
Series CO40
Type LED Module
Current - Hold (Ih) (Max) 2.8A
Current - DC Forward (If) (Max) 23.4V
Manufacturer Samsung Semiconductor, Inc.
Manufacturer Samsung Semiconductor, Inc.
Features -
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Temperature - Test 1070 lm (Typ)
Lumens/Watt @ Current - Test 65°C
Standard Package 192
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Description LED MODULE CO40 3000K SQUARE
Expanded Description LED Lighting COBs, Engines, Modules LED Module CO40 White, Warm Square
Size / Dimension 28.00mm L x 28.00mm W
Thermal Resistance of Package -
Light Emitting Surface (LES) 80
Power - Minimum Receivable -
Manufacturer Part Number SI-N8V3616E0WW
Manufacturer Standard Lead Time 6 Weeks
Other Names 1510-2177
RoHS Status -
MSCP (Mean Spherical Candle Power) 140°
CRI (Color Rendering Index) 29 lm/W
 
WS2811A

Main application field

L led Full -color light string,led Full -color light strip, lamp board.

L led point Light,led Alien screen.

Arranged

Discover end function

Serial number

symbol

Tube name

Functional description

1

Outr

led Drive output

Red(red)PWM Control output

2

Outg

led Drive output

Green(green)PWM Control output

3

OutB

led Drive output

Blue(blue)PWM Control output

4

GND

land

Signal grounding and power ground

5

DO

Data output

Display data -level losses

6

Din

data input

Display data input

7

NC

Empty foot

/ /

8

VDD

Logic power supply

IC powered by

Maximum rated value

parameter

symbol

scope

unit

Logic power supply voltage

VDD

+10.5 ~+13.5

V

Logic input voltage

VI

-0.7~+5.5

V

Static resistance

ESD

Bleak6

KV

Operating temperature

Topt

-40~+80

Storage temperature

TSTG

-40 ~+85


Electrical parameter(VDD = 12V.

parameter

symbol

Minimum

typical

maximum

unit

Remark

RAs well asGAs well asB Low -level output current

IOL

Intersection

16

Intersection

ma

±15%

Low -level output current

Idough

10

Intersection

Intersection

ma

VO = 0.4V,,DOut

Input Current

II

Intersection

Intersection

± 1

tadpole

VI= VDD/VSS

High level input

VIH

3.0

Intersection

5.5

V

DIn

Low -level input

VIL

Intersection

Intersection

0.3

V

DIn

Lag voltage

VH

Intersection

0.35

Intersection

V

DIn


Switching characteristics

parameter

symbol

Minimum

typical

maximum

unit

Test Conditions

Transmission delay time

TPLZ

Intersection

Intersection

300

NS

CL = 15pf, DIN → DOUT, RL = 10kΩ

Decrease time

TTHZ

Intersection

Intersection

120

crickets

Cl = 300pf, outr/outg/outb

Data transmission rate

FMax

600

Intersection

Intersection

Kbps

Duty ratio50%

Input capacitance

CI

Intersection

Intersection

15

PF

Intersection


Data transmission time

T0H

0Code, high level time

280ns ~ 440ns

T1H

1Code, high level time

700ns ~ 1000NS

T0L

0Code, low electricity time

580ns ~ 1000ns

T1L

1Code, low electricity time

580ns ~ 1000ns

Res

Frame unit, low electricity time

200usabove

Package and parameters

  • SOP8 Encapsulate

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